JPH0324789B2 - - Google Patents

Info

Publication number
JPH0324789B2
JPH0324789B2 JP57052236A JP5223682A JPH0324789B2 JP H0324789 B2 JPH0324789 B2 JP H0324789B2 JP 57052236 A JP57052236 A JP 57052236A JP 5223682 A JP5223682 A JP 5223682A JP H0324789 B2 JPH0324789 B2 JP H0324789B2
Authority
JP
Japan
Prior art keywords
emitter
auxiliary
thyristor
base layer
auxiliary emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57052236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57176765A (en
Inventor
Heruberuku Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS57176765A publication Critical patent/JPS57176765A/ja
Publication of JPH0324789B2 publication Critical patent/JPH0324789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP57052236A 1981-03-31 1982-03-30 Thyristor and method of driving same Granted JPS57176765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813112940 DE3112940A1 (de) 1981-03-31 1981-03-31 Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS57176765A JPS57176765A (en) 1982-10-30
JPH0324789B2 true JPH0324789B2 (en]) 1991-04-04

Family

ID=6128934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57052236A Granted JPS57176765A (en) 1981-03-31 1982-03-30 Thyristor and method of driving same

Country Status (4)

Country Link
US (1) US4502071A (en])
EP (1) EP0062102B1 (en])
JP (1) JPS57176765A (en])
DE (1) DE3112940A1 (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
DE59107276D1 (de) * 1990-09-25 1996-02-29 Siemens Ag Abschaltbarer Thyristor
US8519432B2 (en) * 2007-03-27 2013-08-27 Analog Devices, Inc. Semiconductor switch
US20090140388A1 (en) * 2007-11-29 2009-06-04 Infineon Technologies Austria Ag Integrated circuit including an emitter structure and method for producing the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en]) * 1962-06-11
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5629458B2 (en]) * 1973-07-02 1981-07-08
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
JPS583388B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
JPS583387B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
CA1055165A (en) * 1976-01-09 1979-05-22 Westinghouse Electric Corporation Thyristor fired by overvoltage
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
JPS607394B2 (ja) * 1978-08-18 1985-02-23 株式会社明電舎 半導体制御素子
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb

Also Published As

Publication number Publication date
US4502071A (en) 1985-02-26
JPS57176765A (en) 1982-10-30
EP0062102B1 (de) 1988-04-20
DE3112940A1 (de) 1982-10-07
EP0062102A2 (de) 1982-10-13
EP0062102A3 (en) 1983-10-12

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